Doctoral student (m/f/d) for the research subject Reliability and Defect Studies of High-K Gate Stack MOSFETs under Ionizing Radiation

Technische Universität Graz
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published on Mar 26, 2021 11:29 AM

Doctoral student (m/f/d) for the research subject Reliability and Defect Studies of High-K Gate Stack MOSFETs under Ionizing Radiation


  • 30 hours/week
  • As soon as possible
  • at the Institute of Electronics



The doctoral candidate will conduct fundamental research in frame of SIRENS project funded by Austrian Science Fund FWF, being part of international team. Tasks are conducted under guidance and frequent contact with supervisors and they include:


  • Display initiative in identifying and resolving research related scientific problems
  • Perform literature study to identify state of the art
  • Study methodologies to collect, analyze and interpret the measurement results
  • Co-development of concept for device reliability studies
  • Layout the test devices arrays under Cadence Design Environment in given CMOS process
  • Design and adaptation of electrical device characterization environment,
  • Plan and organize scientific investigations such as stress tests for low energy X-ray (that will be conducted in dedicated radiation protected laboratories)
  • Collect data and measurement results and conduct scientific analysis
  • Perform device-level simulations with Technology CAD


Since the work is carried out at the higher education institution (Graz University of Technology), where cooperation with students and knowledge transfer are of high importance, it is expected that the candidate will work closely with Bachelor and Master Students on related research tasks.

Occasionally the candidate will have to travel to experimental sites in Europe and to participate in workshops. Further it will be required that the research findings are presented at international conferences and published in journals, as well as in media and events for the general public (like e.g. “Lange Nacht der Forschung”). In coordination with project team and research unit the candidate will be co-responsible for research data management, for data created and collected throughout the project.


Required Skills / Experience:

  • Good understanding of semiconductor device physics
  • Familiar with integrated circuits technology
  • Experience in C/C++, Matlab or Python programming
  • Master’s degree in Physics or Electrical Engineering
  • Excellent written and spoken English


Desired Skills / Experience

  • Familiar with basic design flow in Cadence integrated circuit design environment
  • Experience in device characterization
  • Basic understanding of electronic circuits
  • Experience with Synopsys TCAD environment


For this position we offer an employment contract for doctoral student 30 hours/week with salary according to B1 category of the Austrian Collective Bargaining Agreement for University Staff. This corresponds to gross salary of arr. 2228 EUR/month paid 14 times per year.


CV accompanied by certificates, master thesis (pdf or weblink), letter describing relevance of experience for this research subject and the motivation to join the team submit per email to:

PDF document PhD_Subject1_High-K_Device_Defect_Studies.pdf, 251 KB
Employment type
part time
Start of work
starting immediately / by arrangement
Fixed term
2,228.0 EUR / month
Hours per week
logo of Technische Universität Graz
First and last name
Alicja Malgorzata Michalowska-Forsyth
Technische Universität Graz
Inffeldgasse 12
8010 Graz